Authors

ORCID

https://orcid.org/0000-0003-1160-7441

Abstract

In this paper, we show the experimental results of a thermally stable Si3N4 external cavity (SiN EC) laser with high power output and the lowest SiN EC laser threshold to our knowledge. The device consists of a 250 μm sized reflective semiconductor optical amplifier butt-coupled to a passive chip based on a series of Si3N4 Bragg gratings acting as narrow reflectors. A threshold of 12 mA has been achieved, with a typical side-mode suppression ratio of 45 dB and measured power output higher than 3 mW. Furthermore, we achieved a mode-hop free-lasing regime in the range of 15–62 mA and wavelength thermal stability up to 80°C. This solves the challenges related to cavity resonances’ thermal shift and shows the possibility for this device to be integrated in dense wavelength-division multiplexing (WDM) and heat-intensive optical interconnects technologies.

Disciplines

Optics | Physical Sciences and Mathematics | Physics | Plasma and Beam Physics

DOI

10.1364/AO.57.00E218

Publication Details

Applied Optics, vol. 57, no. 22. © 2018, Optical Society of America. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modifications of the content of this paper are prohibited.

Publisher

OSA Publishing

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