Excitability in Optically Injected Semiconductor Lasers: Contrasting Quantum- Well- and Quantum-Dot-Based Devices

Authors

• Bryan Kelleher, Centre for Applied Photonics and Process Analysis, Cork Institute of Technology, Cork, Ireland; Tyndall National Institute, Lee Maltings, Cork, IrelandFollow
• C. Bonatto, Centre for Applied Photonics and Process Analysis, Cork Institute of Technology, Cork, Ireland; Tyndall National Institute, Lee Maltings, Cork, Ireland
• Guillaume Huyet, Centre for Applied Photonics and Process Analysis, Cork Institute of Technology, Cork, Ireland; Tyndall National Institute, Lee Maltings, Cork, IrelandFollow
• Stephen P. Hegarty, Centre for Applied Photonics and Process Analysis, Cork Institute of Technology, Cork, Ireland; Tyndall National Institute, Lee Maltings, Cork, IrelandFollow

Abstract

Excitability is a generic prediction for an optically injected semiconductor laser. However, the details of the phenomenon differ depending on the type of device in question. For quantum-well lasers very complicated multipulse trajectories can be found, while for quantum-dot lasers the situation is much simpler. Experimental observations show the marked differences in the pulse shapes while theoretical considerations reveal the underlying mechanism responsible for the contrast, identifying the increased stability of quantum-dot lasers to perturbations as the root.

Disciplines

Optics | Physical Sciences and Mathematics | Physics

DOI

10.1103/PhysRevE.83.026207

Publication Details

Physical Review E, vol. 83, 026207.

© 2011 American Physical Society

Publisher

APS Physics

Recommended Citation

Kelleher, Bryan & Bonatto, Celita & Huyet, Guillaume & Hegarty, Stephen. (2011). Excitability in optically injected semiconductor lasers: Contrasting quantum-well- and quantum-dot-based devices. Physical review. E, Statistical, nonlinear, and soft matter physics. 83. 026207. 10.1103/PhysRevE.83.026207.