Abstract
The gain and phase dynamics of InAs∕GaAs quantum dot amplifiers are studied using single and two-color heterodyne pump probe spectroscopy. The relaxation of the wetting layer carrier density is shown to have a strong effect on the phase dynamics of both ground and excited state transients, while having a much weaker effect on the gain dynamics. In addition, the dynamical alpha factor may also display a constant value after an initial transient. Such behavior is strongly encouraging for reduced pattern effect operation in high speed optical networks.
Disciplines
Physical Sciences and Mathematics
DOI
10.1063/1.2823589
Publisher
AIP Publishing
License Condition
This work is licensed under a Creative Commons Attribution 4.0 International License.
Recommended Citation
O‘Driscoll, I. et al., 2007. Phase dynamics of InAs∕GaAs quantum dot semiconductor optical amplifiers. Applied Physics Letters, 91(26), p.263506. Available at: http://dx.doi.org/10.1063/1.2823589.
Publication Details
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in O‘Driscoll, I et al., Appl. Phys. Lett. 91, 263506 (2007) and may be found at http://dx.doi.org/10.1063/1.2823589.
This study has been supported by the Science Foundation Ireland (SFI) under Contract Nos. 01/FI/CO13 and 03/IN.1/1340, the EU project TRIUMPH (IST-027638 STP), the Irish Research Council for Science, Engineering and Technology (IRCSET), the Tyndall National Access Programme and the Irish Higher Education Authority under the PRTLI program.